Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters Toshiba ...

As it becomes the first SiC company to transition to pure-play 200-mm, company announces cost cutting measures to yield ...

The automotive semiconductor market is expecting a CAGR of 11 percent between 2023 and 2029 to almost $100 billion at the end ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

Siemens Smart Infrastructure has launched its first fully electronic starter with semiconductor technology. Compared to ...

EPC has announced that the Full Commission of the US International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN ...

Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to ...

Navitas Semiconductor, a developer of GaN power ICs and SiC technology, has announced unaudited financial results for the ...

Allegro MicroSystems has announced a series of new power products designed to improve performance and efficiency across ...

STMicroelectronics’ STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible ...